STP75NS04Z
MOSFET N-CH 33V 80A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP75NS04Z is an N-Channel Power MOSFET from the MESH OVERLAY™ III series. This TO-220AB packaged device offers a Drain-Source Voltage (Vdss) of 33V and a continuous Drain Current (Id) of 80A at 25°C. The low on-resistance of 11mOhm is achieved at 40A and a gate-source voltage of 10V. With a maximum power dissipation of 110W (Tc) and an operating temperature range of -55°C to 175°C (TJ), this component is suitable for demanding applications. Key electrical parameters include a gate charge of 50nC (max) at 10V and input capacitance (Ciss) of 1860pF (max) at 25V. This device is commonly employed in power supplies, motor control, and automotive applications.
Additional Information
Series: MESH OVERLAY™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | Clamped |
| Drain to Source Voltage (Vdss) | 33 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1860 pF @ 25 V |
Request a Quote
Clients Also Buy
STP80NF10
MOSFET N-CH 100V 80A TO220AB
STP7LN80K5
MOSFET N-CH 800V 5A TO220
STP19NM50N
MOSFET N-CH 500V 14A TO220AB
