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STP75NF68

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STP75NF68

MOSFET N-CH 68V 80A TO220-3

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STP75NF68 is a high-performance N-Channel Power MOSFET from the STripFET™ II series. This component is designed for demanding applications requiring robust power handling. It features a Drain-Source Voltage (Vdss) of 68V and a continuous Drain Current (Id) of 80A at 25°C, with a maximum power dissipation of 190W (Tc). The Rds On is specified at a low 14mOhm at 40A and 10V gate drive. Key parameters include a gate charge (Qg) of 75 nC at 10V and input capacitance (Ciss) of 2550 pF at 25V. The STP75NF68 utilizes MOSFET technology and is housed in a TO-220-3 through-hole package, suitable for mounting in various power systems. It operates across an extended temperature range of -55°C to 175°C (TJ). This device finds application in power supplies, automotive systems, and industrial motor control.

Additional Information

Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs14mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)190W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)68 V
Gate Charge (Qg) (Max) @ Vgs75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2550 pF @ 25 V

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