STP75N3LLH6
MOSFET N-CH 30V 75A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP75N3LLH6, a N-Channel MOSFET from the DeepGATE™, STripFET™ VI series, offers 30V drain-source breakdown voltage and continuous drain current capability of 75A at 25°C. This component features a low on-resistance of 5.9mOhm maximum at 37.5A and 10V gate-source voltage. With a gate charge of 23.8 nC maximum at 4.5V, it exhibits an input capacitance of 2030 pF maximum at 25V. The device is rated for 60W maximum power dissipation and operates within a temperature range of -55°C to 175°C. Packaged in a TO-220-3 through-hole configuration, the STP75N3LLH6 is suitable for applications in automotive and industrial power systems.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 37.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2030 pF @ 25 V |
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