STP70N10F4
MOSFET N-CH 100V 65A TO220-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP70N10F4 is an N-Channel Power MOSFET from the STripFET™ DeepGATE™ series. This component features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 65A at 25°C. With a maximum on-resistance (Rds On) of 19.5mOhm at 30A and 10V Vgs, it offers efficient power handling with a maximum power dissipation of 150W (Tc). The device is housed in a standard TO-220-3 package and is suitable for through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 85 nC (max) at 10V Vgs and an input capacitance (Ciss) of 5800 pF (max) at 25V Vds. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly employed in power switching applications across various industrial sectors.
Additional Information
Series: DeepGATE™, STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 19.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5800 pF @ 25 V |
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