STP6NK70Z
MOSFET N-CH 700V 5A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics SuperMESH™ N-Channel Power MOSFET, part number STP6NK70Z, offers a 700V drain-source voltage and a continuous drain current of 5A at 25°C. This device features a maximum on-resistance of 1.8 Ohms at 2.5A and 10V, with a gate charge of 47nC at 10V. The STP6NK70Z is designed for through-hole mounting in a standard TO-220-3 package, providing 110W of power dissipation. It operates across a temperature range of -55°C to 150°C. This component is suitable for applications in switched-mode power supplies, lighting, and consumer electronics.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 930 pF @ 25 V |
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