STP6NK60ZFP
MOSFET N-CH 600V 6A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP6NK60ZFP is a SuperMESH™ N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 6 A at 25°C. With a maximum power dissipation of 30 W (Tc), it is suitable for demanding power conversion tasks. The device exhibits a low Rds On of 1.2 Ohm at 3 A and 10 V, with a gate charge (Qg) of 46 nC at 10 V. Input capacitance (Ciss) is 905 pF at 25 V. The STP6NK60ZFP is packaged in a TO-220FP (TO-220-3 Full Pack) and mounts via through-hole. It operates across a wide temperature range of -55°C to 150°C (TJ) and is utilized in industries such as industrial power supplies and lighting.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 905 pF @ 25 V |
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