STP6NK50Z
MOSFET N-CH 500V 5.6A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP6NK50Z is an N-Channel SuperMESH™ power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 5.6 A at 25°C. The device boasts a low on-resistance (Rds On) of 1.2 Ohm maximum at 2.8 A and 10 V gate drive. Key parameters include a Gate Charge (Qg) of 24.6 nC maximum at 10 V and an input capacitance (Ciss) of 690 pF maximum at 25 V. The STP6NK50Z offers a maximum power dissipation of 90 W at 25°C case temperature and operates within an industrial temperature range of -55°C to 150°C. Packaged in a standard TO-220AB through-hole configuration, this MOSFET is suitable for power supply, lighting, and industrial motor control applications.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 24.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 690 pF @ 25 V |
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