STP6NC60
MOSFET N-CH 600V 6A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP6NC60, an N-Channel Power MOSFET from the PowerMESH™ II series, offers a 600V drain-source voltage (Vdss) and 6A continuous drain current (Id) at 25°C. This through-hole TO-220AB packaged component features a maximum on-resistance (Rds On) of 1.2Ohm at 3A, 10V, with a gate threshold voltage (Vgs(th)) of 4V at 250µA. Key parameters include a maximum gate charge (Qg) of 45.5 nC at 10V and an input capacitance (Ciss) of 1020 pF at 25V. With a maximum power dissipation of 125W at 25°C and an operating junction temperature of 150°C (TJ), this device is suitable for applications in power supply, lighting, and motor control industries.
Additional Information
Series: PowerMESH™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 45.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 25 V |
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