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STP6NC60

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STP6NC60

MOSFET N-CH 600V 6A TO220AB

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STP6NC60, an N-Channel Power MOSFET from the PowerMESH™ II series, offers a 600V drain-source voltage (Vdss) and 6A continuous drain current (Id) at 25°C. This through-hole TO-220AB packaged component features a maximum on-resistance (Rds On) of 1.2Ohm at 3A, 10V, with a gate threshold voltage (Vgs(th)) of 4V at 250µA. Key parameters include a maximum gate charge (Qg) of 45.5 nC at 10V and an input capacitance (Ciss) of 1020 pF at 25V. With a maximum power dissipation of 125W at 25°C and an operating junction temperature of 150°C (TJ), this device is suitable for applications in power supply, lighting, and motor control industries.

Additional Information

Series: PowerMESH™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Rds On (Max) @ Id, Vgs1.2Ohm @ 3A, 10V
FET Feature-
Power Dissipation (Max)125W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1020 pF @ 25 V

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