STP6NB90
MOSFET N-CH 900V 5.8A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP6NB90 is a PowerMESH™ N-Channel Power MOSFET designed for high-voltage applications. This component offers a Drain-Source Voltage (Vdss) of 900 V and a continuous Drain Current (Id) of 5.8 A at 25°C (Tc). With a maximum power dissipation of 135 W (Tc) and a low on-resistance of 2 Ohm at 3 A and 10 V, it is suitable for demanding power switching applications. The device features through-hole mounting in a standard TO-220AB package. Key electrical characteristics include a gate charge (Qg) of 55 nC at 10 V and input capacitance (Ciss) of 1400 pF at 25 V. It operates reliably up to a junction temperature of 150°C. This MOSFET is commonly utilized in power supplies, motor control, and industrial automation.
Additional Information
Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 135W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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