STP6N65M2
MOSFET N-CH 650V 4A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP6N65M2 is a 650V N-Channel Power MOSFET from the MDmesh™ series. This through-hole component, packaged in a TO-220-3, offers a continuous drain current of 4A at 25°C and a maximum power dissipation of 60W at the same temperature. Key electrical characteristics include a drain-to-source voltage (Vdss) of 650V, a maximum on-resistance (Rds On) of 1.35 Ohm at 2A and 10V Vgs, and a typical gate charge (Qg) of 9.8 nC at 10V Vgs. Input capacitance (Ciss) is specified at a maximum of 226 pF at 100V Vds. This device is suitable for applications in power supplies, lighting, and motor control. It operates within an ambient temperature range of -55°C to 150°C.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.35Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 226 pF @ 100 V |
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