STP6N52K3
MOSFET N-CH 525V 5A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STP6N52K3 is a SuperMESH3™ N-Channel Power MOSFET designed for high-voltage applications. Featuring a Drain-Source Voltage (Vdss) of 525V and a continuous Drain Current (Id) of 5A at 25°C, this component offers a maximum On-Resistance (Rds On) of 1.2 Ohms at 2.5A and 10V Vgs. With a maximum power dissipation of 70W (Tc) and an operating junction temperature of 150°C, the STP6N52K3 is suitable for demanding power conversion circuits in industrial, consumer electronics, and lighting applications. The device is housed in a standard TO-220-3 package, facilitating through-hole mounting. Key parameters include a Gate Charge (Qg) of 26 nC at 10V and Input Capacitance (Ciss) of 670 pF at 50V.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 525 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 50 V |