STP65NF06
MOSFET N-CH 60V 60A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP65NF06 is an N-channel Power MOSFET from the STripFET™ II series. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 60A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 14mOhm maximum at 30A and 10V Vgs. Key parameters include a gate charge (Qg) of 75nC maximum at 10V Vgs and an input capacitance (Ciss) of 1700pF maximum at 25V Vds. With a maximum power dissipation of 110W (Tc), this through-hole TO-220AB packaged MOSFET is suitable for applications in automotive, industrial, and power supply sectors. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
Request a Quote
Clients Also Buy
STN2NF10
MOSFET N-CH 100V 2.4A SOT-223
STN4NF03L
MOSFET N-CH 30V 6.5A SOT223
STD20NF06LT4
MOSFET N-CH 60V 24A DPAK
