STP62NS04Z
MOSFET N-CH 33V 62A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP62NS04Z, a N-Channel MOSFET from the MESH OVERLAY™ series, offers a 33V drain-source voltage and a continuous drain current of 62A at 25°C (Tc). This through-hole component, packaged in a TO-220AB, features a maximum power dissipation of 110W (Tc) and a low on-resistance of 15mOhm at 30A and 10V. Key parameters include a gate charge of 47 nC @ 10V and an input capacitance of 1330 pF @ 25V. With an operating temperature range of -55°C to 175°C (TJ), this device is suitable for applications in automotive and industrial power switching.
Additional Information
Series: MESH OVERLAY™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | Clamped |
| Drain to Source Voltage (Vdss) | 33 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330 pF @ 25 V |
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