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STP60NH2LL

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STP60NH2LL

MOSFET N-CH 24V 40A TO220AB

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STP60NH2LL is a high-performance N-Channel STripFET™ MOSFET designed for demanding applications. This component offers a 24V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 40A at 25°C (Tc). The device features a low on-resistance of 11mOhm maximum at 20A and 10V (Vgs), contributing to efficient power handling with a maximum power dissipation of 60W (Tc). With a gate charge (Qg) of 27 nC at 4.5V (Vgs) and input capacitance (Ciss) of 990 pF at 25V (Vds), it is suitable for various switching applications. The STP60NH2LL operates across a wide temperature range of -55°C to 175°C (TJ) and is housed in a standard TO-220-3 through-hole package. It finds utility in power management, automotive electronics, and industrial automation sectors.

Additional Information

Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Rds On (Max) @ Id, Vgs11mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)60W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±18V
Drain to Source Voltage (Vdss)24 V
Gate Charge (Qg) (Max) @ Vgs27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds990 pF @ 25 V

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