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STP60NF06FP

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STP60NF06FP

MOSFET N-CH 60V 30A TO220FP

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STP60NF06FP is an N-Channel Power MOSFET designed for demanding applications. This component features a 60 V drain-source voltage (Vdss) and a continuous drain current (Id) of 30 A at 25°C (Tc). With a low on-resistance (Rds On) of 16 mOhm at 30 A and 10 V gate-source voltage (Vgs), it offers efficient conduction. The STP60NF06FP has a maximum power dissipation of 30 W (Tc) and a gate charge (Qg) of 66 nC at 10 V. Its input capacitance (Ciss) is 1810 pF at 25 V. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is housed in a TO-220FP package and is suitable for through-hole mounting. It finds application in power supply units, motor control, and automotive systems.

Additional Information

Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs16mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)30W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220FP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1810 pF @ 25 V

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