STP60NE06L-16
MOSFET N-CH 60V 60A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP60NE06L-16 is a STripFET™ series N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 60A at 25°C, with a maximum power dissipation of 150W (Tc). The Rds On is specified at a maximum of 14mOhm at 30A and 10V Vgs. Gate charge (Qg) is 70 nC maximum at 5V Vgs, and input capacitance (Ciss) is 4150 pF maximum at 25V Vds. The device is housed in a TO-220-3 package, suitable for through-hole mounting, and operates at an ambient temperature of up to 175°C (TJ). This MOSFET is commonly utilized in industrial and automotive power management systems.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4150 pF @ 25 V |
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