STP60NE06-16
MOSFET N-CH 60V 60A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP60NE06-16 is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 60V. This through-hole component, packaged in a TO-220AB, offers a continuous drain current (Id) of 60A at 25°C and a maximum power dissipation of 150W (Tc). The Rds On is specified at a maximum of 16mOhm at 30A and 10V gate-source voltage. Key characteristics include a Gate Charge (Qg) of 160 nC at 10V and an input capacitance (Ciss) of 6200 pF. Operating temperature ranges up to 175°C (TJ). This MOSFET is suitable for applications in automotive, industrial, and consumer electronics power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6200 pF @ 25 V |
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