STP60N55F3
MOSFET N-CH 55V 80A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP60N55F3 is a N-Channel Power MOSFET from the STripFET™ III series. This device features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 110W (Tc). The low on-resistance is specified at 8.5mOhm maximum at 32A and 10V gate drive. Key parameters include Gate Charge (Qg) of 45 nC (max) at 10V and Input Capacitance (Ciss) of 2200 pF (max) at 25V. The STP60N55F3 is housed in a TO-220AB package and supports through-hole mounting. Operating temperature range is -55°C to 175°C (TJ), with a maximum gate-source voltage of ±20V. This component is suitable for applications in power supply, automotive, and industrial sectors.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
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