STP60N3LH5
MOSFET N-CH 30V 48A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP60N3LH5 is an N-Channel STripFET™ V Power MOSFET. This through-hole component features a 30V drain-source breakdown voltage and a continuous drain current capability of 48A at 25°C (Tc). The device exhibits a low on-resistance (Rds(on)) of 8.4mOhm maximum at 24A and 10V Vgs. Key parameters include a gate charge (Qg) of 8.8 nC maximum at 5V Vgs and input capacitance (Ciss) of 1350 pF maximum at 25V Vds. With a maximum power dissipation of 60W (Tc), it is suitable for applications requiring efficient power switching. The STP60N3LH5 is housed in a TO-220-3 package and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is commonly employed in automotive and industrial power management systems.
Additional Information
Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 25 V |
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