STP5NK90Z
MOSFET N-CH 900V 4.5A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP5NK90Z is a SuperMESH™ N-Channel Power MOSFET designed for high-voltage applications. This device features a maximum drain-source voltage (Vdss) of 900V and a continuous drain current (Id) rating of 4.5A at 25°C (Tc). With a low Rds(on) of 2.5 Ohm at 10V Vgs and 2.25A Id, it offers efficient switching characteristics. The MOSFET exhibits a typical gate charge (Qg) of 41.5 nC and input capacitance (Ciss) of 1160 pF at 25V Vds. Its through-hole TO-220AB package facilitates ease of assembly in power supply units, industrial motor control, and lighting applications. The STP5NK90Z operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 125W (Tc).
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 2.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 41.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 25 V |
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