STP5NK65ZFP
MOSFET N-CH 650V 4.5A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP5NK65ZFP, an N-Channel SuperMESH™ MOSFET, offers a 650V drain-source breakdown voltage and 4.5A continuous drain current at 25°C. This component features a low on-resistance of 1.8 Ohm maximum at 2.1A and 10V Vgs, with a typical input capacitance of 680 pF at 25V. Designed for through-hole mounting in a TO-220FP package, it dissipates a maximum of 25W at 25°C. The STP5NK65ZFP is suitable for applications in power supply, lighting, and industrial automation. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 25 V |
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