STP5NK65Z
MOSFET N-CH 650V 5A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP5NK65Z is a 650V N-Channel SuperMESH™ Power MOSFET. This device offers a continuous drain current of 5A (Tc) and a maximum power dissipation of 85W (Tc). Key parameters include a low Rds(on) of 1.8 Ohms maximum at 2.1A and 10V drive, and a gate charge (Qg) of 35 nC maximum at 10V. Input capacitance (Ciss) is rated at 680 pF maximum at 25V. The STP5NK65Z features a TO-220-3 package for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power supply units, lighting, and industrial automation.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 25 V |