STP5NK52ZD
MOSFET N-CH 520V 4.4A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SuperMESH™ STP5NK52ZD is an N-Channel Power MOSFET designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 520V and a continuous Drain Current (Id) of 4.4A at 25°C (Tc). The device offers a low on-resistance of 1.5 Ohm maximum at 2.2A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 16.9 nC maximum at 10V and an Input Capacitance (Ciss) of 529 pF maximum at 25V. The STP5NK52ZD is packaged in a TO-220-3 through-hole configuration, allowing for a maximum power dissipation of 25W (Tc). It operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for various power switching applications, including power supplies and motor control.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 520 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 529 pF @ 25 V |
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