STP5NB60
MOSFET N-CH 600V 5A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP5NB60 is a PowerMESH™ N-Channel MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 5A at 25°C. The Rds(On) is a maximum of 2 Ohms at 2.5A and 10V Vgs. With a maximum power dissipation of 100W (Tc) and an operating junction temperature of 150°C, it is suitable for demanding power switching applications. Key parameters include a Gate Charge (Qg) of 30 nC @ 10V and Input Capacitance (Ciss) of 884 pF @ 25V. The STP5NB60 is housed in a TO-220-3 package, facilitating through-hole mounting. This MOSFET is utilized in power supplies, lighting, and industrial motor control systems.
Additional Information
Series: PowerMESH™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 884 pF @ 25 V |
Request a Quote
Clients Also Buy
STGD3NB60SDT4
IGBT 600V 6A DPAK
STH3N150-2
MOSFET N-CH 1500V 2.5A H2PAK
STGP7NC60HD
IGBT 600V 25A 80W TO220
