STP5NB40
MOSFET N-CH 400V 4.7A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP5NB40 is an N-Channel Power MOSFET from the PowerMESH™ series with a Drain-Source Voltage (Vdss) of 400 V. This device features a continuous drain current (Id) of 4.7A at 25°C and a maximum power dissipation of 80W at the same temperature. The Rds On (Max) is 1.8 Ohm at 2.3A and 10V Vgs. Key parameters include a gate charge (Qg) of 20 nC @ 10 V and input capacitance (Ciss) of 405 pF @ 25 V. Designed for through-hole mounting, it is housed in a TO-220-3 package and operates up to 150°C junction temperature. The STP5NB40 is suitable for applications in power supplies, lighting, and industrial motor control.
Additional Information
Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 405 pF @ 25 V |
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