STP5N95K3
MOSFET N-CH 950V 4A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics SuperMESH3™ STP5N95K3 is an N-channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 950V and a continuous Drain Current (Id) of 4A at 25°C (Tc), with a maximum power dissipation of 90W (Tc). The Rds On is rated at a maximum of 3.5 Ohms at 2A and 10V. Key parameters include a gate charge (Qg) of 19 nC at 10V and input capacitance (Ciss) of 460 pF at 25V. The STP5N95K3 utilizes through-hole mounting within a standard TO-220 package. Operating temperature ranges from -55°C to 150°C. This device is suitable for use in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 950 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 25 V |
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