STP5N62K3
MOSFET N-CH 620V 4.2A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP5N62K3 is a SuperMESH3™ N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 620 V. This through-hole component, packaged in a TO-220AB, offers a continuous drain current (Id) of 4.2 A at 25°C and a maximum power dissipation of 70 W. It features a low on-resistance of 1.6 Ohms at 2.1 A and 10 V gate drive, with a typical gate charge of 26 nC at 10 V. The input capacitance (Ciss) is 680 pF max at 50 V. This device is suitable for applications in power supply units, lighting, and motor control. The operating temperature range is -55°C to 150°C.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 620 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 50 V |