STP5N52K3
MOSFET N-CH 525V 4.4A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics SuperMESH3™ N-Channel Power MOSFET, part number STP5N52K3, offers a 525V drain-source voltage (Vdss) and 4.4A continuous drain current (Id) at 25°C. This device features a low Rds(on) of 1.5Ohm maximum at 2.2A and 10V Vgs. Key parameters include a gate charge (Qg) of 14nC maximum at 10V and input capacitance (Ciss) of 450pF maximum at 100V. The STP5N52K3 is packaged in a TO-220 through-hole configuration, with a maximum power dissipation of 70W at 25°C. Its operating temperature range is -55°C to 150°C. This component is suitable for applications in power supply units and industrial automation.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 525 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 100 V |
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