STP5N120
MOSFET N-CH 1200V 4.7A TO220-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP5N120 is a SuperMESH™ N-Channel Power MOSFET designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 1200 V and a continuous Drain Current (Id) of 4.7 A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 3.5 Ohms at 2.3 A and 10 V gate drive. With a maximum power dissipation of 160 W (Tc), it is suitable for demanding power systems. Key parameters include a gate charge (Qg) of 55 nC at 10 V and input capacitance (Ciss) of 120 pF at 25 V. The STP5N120 is housed in a TO-220-3 package, facilitating through-hole mounting. This MOSFET is utilized in industrial power supplies, renewable energy systems, and electric vehicle applications. It operates reliably within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 25 V |
Request a Quote
Clients Also Buy
STN1NK60Z
MOSFET N-CH 600V 300MA SOT223
STD3NK80ZT4
MOSFET N-CH 800V 2.5A DPAK
STF3NK80Z
MOSFET N-CH 800V 2.5A TO220FP
