STP50NE10
MOSFET N-CH 100V 50A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP50NE10 is an N-Channel Power MOSFET from the STripFET™ series. This component offers a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 50A at 25°C (Tc). With a maximum power dissipation of 180W (Tc) and a low on-resistance of 27mOhm at 25A and 10V, it is suitable for demanding applications. The STP50NE10 features a typical gate charge (Qg) of 166 nC at 10V and an input capacitance (Ciss) of 6000 pF at 25V. It operates at junction temperatures up to 175°C and is packaged in a standard TO-220-3 through-hole configuration. This device is commonly utilized in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: STripFET™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 166 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
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