STP50NE08
MOSFET N-CH 80V 50A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP50NE08 is an N-Channel Power MOSFET in a TO-220 package. This device offers a drain-source voltage (Vdss) of 80 V and a continuous drain current (Id) of 50 A at 25°C. With a maximum power dissipation of 150 W (Tc) and a low on-resistance (Rds On) of 24 mOhm at 25 A and 10 V, it is suitable for high-current applications. Key parameters include a gate charge (Qg) of 110 nC at 10 V and an input capacitance (Ciss) of 5100 pF at 25 V. The operating junction temperature range is up to 175°C. This component is commonly utilized in industrial, automotive, and power supply applications demanding robust power switching.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 25 V |
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