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STP4NK50ZFP

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STP4NK50ZFP

MOSFET N-CH 500V 3A TO220FP

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STP4NK50ZFP is a SuperMESH™ N-Channel Power MOSFET designed for high-voltage applications. This component features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 3A at 25°C. With a maximum power dissipation of 20W (Tc) and a low on-resistance (Rds On) of 2.7 Ohm at 1.5A and 10V gate-source voltage, it offers efficient switching performance. The device has a gate charge (Qg) of 12 nC at 10V and an input capacitance (Ciss) of 310 pF at 25V. Packaged in a TO-220FP (Full Pack) through-hole configuration, the STP4NK50ZFP operates across a temperature range of -55°C to 150°C. Its robust design makes it suitable for use in power supplies, lighting, and industrial motor control applications.

Additional Information

Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Rds On (Max) @ Id, Vgs2.7Ohm @ 1.5A, 10V
FET Feature-
Power Dissipation (Max)20W (Tc)
Vgs(th) (Max) @ Id4.5V @ 50µA
Supplier Device PackageTO-220FP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds310 pF @ 25 V

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