STP4NK50ZD
MOSFET N-CH 500V 3A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP4NK50ZD is a 500V N-Channel SuperMESH™ MOSFET designed for high-efficiency power switching applications. This device features a continuous drain current (Id) of 3A at 25°C and a maximum power dissipation of 45W (Tc). The low on-resistance (Rds On) of 2.7 Ohm at 1.5A and 10V gate drive, coupled with a gate charge (Qg) of 12 nC, contributes to reduced switching losses. The STP4NK50ZD is housed in a standard TO-220AB package for through-hole mounting, offering a robust thermal solution. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in power supplies, lighting, and motor control systems.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 25 V |
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