STP4NK50Z
MOSFET N-CH 500V 3A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP4NK50Z is a SuperMESH™ series N-Channel Power MOSFET designed for high voltage applications. This through-hole component features a Drain-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 3A at 25°C. The device exhibits a low on-resistance (Rds On) of 2.7 Ohms maximum at 1.5A and 10V gate drive. With a maximum power dissipation of 45W at 25°C (Tc), it is suitable for demanding power conversion tasks. Key parameters include a gate charge (Qg) of 12 nC maximum at 10V and input capacitance (Ciss) of 310 pF maximum at 25V. The STP4NK50Z is commonly utilized in power supply units, lighting applications, and motor control systems. It operates within an ambient temperature range of -55°C to 150°C.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 25 V |
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