STP4NB80
MOSFET N-CH 800V 4A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP4NB80 is an N-Channel Power MOSFET from the PowerMESH™ series, designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 800 V and a continuous drain current (Id) of 4 A at 25°C. The Rds On is specified at a maximum of 3.3 Ohms at 2 A and 10 V gate drive. Key parameters include a typical Gate Charge (Qg) of 29 nC at 10 V and Input Capacitance (Ciss) of 920 pF at 25 V. With a maximum power dissipation of 100 W (Tc) and an operating junction temperature of 150°C, this device is housed in a standard TO-220-3 package suitable for through-hole mounting. It finds application in power factor correction, switch mode power supplies, and general high-voltage switching.
Additional Information
Series: PowerMESH™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 25 V |
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