STP4NB50
MOSFET N-CH 500V 3.8A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP4NB50 is a 500V, N-Channel Power MOSFET from the PowerMESH™ series. This through-hole component features a continuous drain current of 3.8A (Tc) and a maximum power dissipation of 80W (Tc). With a drain-to-source voltage of 500V and a maximum Rds(on) of 2.8 Ohm at 1.9A, 10V, it is suitable for demanding power applications. Key parameters include a gate charge of 21 nC @ 10V and input capacitance of 400 pF @ 25V. The device operates at junction temperatures up to 150°C and is supplied in a TO-220AB package. It finds application in various industrial sectors requiring robust power switching.
Additional Information
Series: PowerMESH™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8Ohm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
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