STP4NB100
MOSFET N-CH 1000V 3.8A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP4NB100 is an N-Channel Power MOSFET from the PowerMESH™ series. This component features a Drain-Source Voltage (Vdss) of 1000V and a continuous Drain Current (Id) of 3.8A at 25°C (Tc). With a maximum Power Dissipation of 125W (Tc) and an Rds On of 4.4Ohm at 2A, 10V, it is designed for efficient switching applications. Key parameters include a Gate Charge (Qg) of 45 nC max at 10V and an Input Capacitance (Ciss) of 1400 pF max at 25V. The device operates at a maximum junction temperature of 150°C and is housed in a TO-220-3 through-hole package. This MOSFET is suitable for use in power supply, lighting, and industrial motor control applications.
Additional Information
Series: PowerMESH™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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