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STP4N62K3

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STP4N62K3

MOSFET N-CH 620V 3.8A TO220

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics SuperMESH3™ N-Channel Power MOSFET, part number STP4N62K3, offers a 620V drain-source breakdown voltage and a continuous drain current capability of 3.8A at 25°C (Tc). This device features a maximum on-resistance (Rds On) of 1.95 Ohms at 1.9A and 10V Vgs. With a 70W maximum power dissipation (Tc) and an operating junction temperature up to 150°C, it is designed for demanding applications. Key parameters include a gate charge (Qg) of 14 nC (max) at 10V Vgs and input capacitance (Ciss) of 450 pF (max) at 50V Vds. The STP4N62K3 is housed in a TO-220-3 package, suitable for through-hole mounting. This component finds utility in power factor correction (PFC) and switch-mode power supply (SMPS) designs within the industrial and consumer electronics sectors.

Additional Information

Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.8A (Tc)
Rds On (Max) @ Id, Vgs1.95Ohm @ 1.9A, 10V
FET Feature-
Power Dissipation (Max)70W (Tc)
Vgs(th) (Max) @ Id4.5V @ 50µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)620 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds450 pF @ 50 V

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