STP4N62K3
MOSFET N-CH 620V 3.8A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SuperMESH3™ N-Channel Power MOSFET, part number STP4N62K3, offers a 620V drain-source breakdown voltage and a continuous drain current capability of 3.8A at 25°C (Tc). This device features a maximum on-resistance (Rds On) of 1.95 Ohms at 1.9A and 10V Vgs. With a 70W maximum power dissipation (Tc) and an operating junction temperature up to 150°C, it is designed for demanding applications. Key parameters include a gate charge (Qg) of 14 nC (max) at 10V Vgs and input capacitance (Ciss) of 450 pF (max) at 50V Vds. The STP4N62K3 is housed in a TO-220-3 package, suitable for through-hole mounting. This component finds utility in power factor correction (PFC) and switch-mode power supply (SMPS) designs within the industrial and consumer electronics sectors.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.95Ohm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 620 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 50 V |
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