STP45NE06
MOSFET N-CH 60V 45A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP45NE06 is an N-Channel Power MOSFET from the STripFET™ series. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 45A (Tc) at 25°C. The device offers a low on-resistance of 28mOhm maximum at 22.5A and 10V Vgs, with a typical gate charge of 80nC at 10V. Its high current density and 100W power dissipation (Tc) make it suitable for demanding applications. Operating at a junction temperature up to 175°C, this TO-220 packaged MOSFET is designed for through-hole mounting. Industry applications include power supplies, motor control, and automotive systems.
Additional Information
Series: STripFET™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 22.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
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