STP410N4F7AG
MOSFET N-CHANNEL 40V 180A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ F7 series N-Channel Power MOSFET, part number STP410N4F7AG. This device features a 40V drain-source breakdown voltage and a continuous drain current capability of 180A at 25°C (Tc). With a maximum power dissipation of 365W (Tc), it is designed for high-power applications. The MOSFET is housed in a standard TO-220-3 package for through-hole mounting. It supports a gate-source drive voltage range from 4.5V to 10V for optimal on-resistance performance. This component is commonly utilized in power management, automotive electronics, and industrial automation systems.
Additional Information
Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 365W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 40 V |
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