STP40NS15
MOSFET N-CH 150V 40A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP40NS15 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 40A at 25°C. The STP40NS15 offers a low Rds On of 52mOhm maximum at 40A and 10V, coupled with a maximum power dissipation of 140W (Tc). It utilizes STMicroelectronics' MESH OVERLAY™ technology, evident in its 110 nC gate charge and 2400 pF input capacitance. The device operates at junction temperatures up to 175°C and is housed in a standard TO-220-3 package, suitable for through-hole mounting. This MOSFET is commonly found in power switching applications across industrial and automotive sectors.
Additional Information
Series: MESH OVERLAY™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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