STP40NF12
MOSFET N-CH 120V 40A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP40NF12 is an N-Channel Power MOSFET from the STripFET™ II series. This component features a 120V drain-source breakdown voltage and a continuous drain current capability of 40A at 25°C case temperature. With a maximum power dissipation of 150W (Tc) and a low Rds(on) of 32mOhm at 20A and 10V Vgs, it offers efficient switching performance. The device is housed in a standard TO-220AB through-hole package. Key parameters include a gate charge of 80 nC and input capacitance of 1880 pF at 25V. This MOSFET is suitable for applications requiring robust power handling in sectors such as industrial power supplies, automotive systems, and motor control. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1880 pF @ 25 V |
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