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STP40NF03L

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STP40NF03L

MOSFET N-CH 30V 40A TO220AB

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

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The STMicroelectronics STP40NF03L is an N-Channel STripFET™ power MOSFET designed for high-efficiency switching applications. This device features a 30 V drain-source voltage and a continuous drain current capability of 40 A at 25°C (Tc), with a maximum power dissipation of 70 W (Tc). The low on-resistance of 22 mOhm at 20 A and 10 V (Vgs) minimizes conduction losses. Gate drive requirements are met with a 10 V maximum gate-source voltage for optimal Rds(on) performance, and a threshold voltage (Vgs(th)) of 2.5 V at 250 µA. Key parameters include an input capacitance (Ciss) of 770 pF at 25 V and a gate charge (Qg) of 15 nC at 4.5 V. The STP40NF03L is housed in a standard TO-220AB through-hole package and operates across a wide temperature range of -55°C to 175°C (TJ). This component is suitable for use in automotive, industrial motor control, and power supply applications.

Additional Information

Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Rds On (Max) @ Id, Vgs22mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)70W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds770 pF @ 25 V

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