STP40N20
MOSFET N-CH 200V 40A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP40N20 is an N-Channel STripFET™ power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 40A at 25°C (Tc). Its low on-resistance (Rds On) of 45mOhm maximum at 20A and 10V gate-source voltage ensures minimal conduction losses. The device offers a maximum power dissipation of 160W (Tc) and a gate charge (Qg) of 75 nC at 10V. With an input capacitance (Ciss) of 2500 pF maximum at 25V, it is suitable for demanding power control circuits. The STP40N20 is packaged in a TO-220AB through-hole configuration, making it ideal for power supplies, motor control, and industrial automation systems. It operates within an extended temperature range of -55°C to 150°C.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
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