STP400N4F6
MOSFET N-CH 40V 120A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP400N4F6 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series. This component features a 40V drain-source voltage and a continuous drain current capability of 120A at 25°C, with a maximum power dissipation of 300W. The low on-resistance is specified at 1.7mOhm at 60A and 10V gate-source voltage. Key parameters include a gate charge of 377 nC at 10V and input capacitance of 20,000 pF at 25V. Designed for through-hole mounting in a TO-220 package, this MOSFET operates across a temperature range of -55°C to 175°C. Applications for this component include power management and switching solutions in industrial and automotive sectors.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 377 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 20000 pF @ 25 V |
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