STP3NK60Z
MOSFET N-CH 600V 2.4A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SuperMESH™ N-Channel Power MOSFET, part number STP3NK60Z, features a 600 V drain-source voltage (Vdss) and a continuous drain current of 2.4 A (Tc) at 25°C. This MOSFET is configured in a TO-220AB package, designed for through-hole mounting. With a maximum power dissipation of 45 W (Tc) and a typical Rds(on) of 3.6 Ohms at 1.2 A and 10 V gate drive, it offers efficient switching performance. Key parameters include a gate charge (Qg) of 11.8 nC at 10 V and input capacitance (Ciss) of 311 pF at 25 V. The STP3NK60Z is suitable for applications in power supply units, industrial motor control, and lighting systems. It operates within an extended temperature range of -55°C to 150°C (TJ).
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 311 pF @ 25 V |
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