STP3NK100Z
MOSFET N-CH 1000V 2.5A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP3NK100Z is a SuperMESH™ N-Channel Power MOSFET designed for high-voltage applications. This component offers a Drain-Source Voltage (Vdss) of 1000V and a continuous drain current (Id) of 2.5A at 25°C, with a maximum power dissipation of 90W. Key electrical parameters include a maximum Rds On of 6 Ohm at 1.25A and 10V, a gate charge (Qg) of 18 nC at 10V, and input capacitance (Ciss) of 601 pF at 25V. The device features a ±30V maximum gate-source voltage and a threshold voltage (Vgs(th)) of 4.5V at 50µA. The STP3NK100Z is packaged in a TO-220AB through-hole configuration and operates within an ambient temperature range of -55°C to 150°C. This MOSFET is utilized in power supply units, motor control, and lighting applications.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 1.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 601 pF @ 25 V |
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