STP3NB100
MOSFET N-CH 1000V 3A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP3NB100 is a PowerMESH™ N-Channel MOSFET designed for high-voltage applications. This component features a Drain to Source Voltage (Vdss) of 1000 V and a continuous drain current (Id) of 3A (Tc) at 25°C. The device offers a maximum power dissipation of 100W (Tc) and an Rds On of 6 Ohm at 1.5A, 10V. It utilizes Metal Oxide technology and has a gate charge (Qg) of 30 nC at 10V. The STP3NB100 is housed in a TO-220AB through-hole package and operates at temperatures up to 150°C (TJ). This MOSFET is suitable for use in power supply, lighting, and industrial applications.
Additional Information
Series: PowerMESH™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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