STP3N80K5
MOSFET N-CH 800V 2.5A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP3N80K5 is an 800V N-channel SuperMESH5™ Power MOSFET designed for high-voltage applications. This component features a continuous drain current of 2.5A (Tc) and a maximum power dissipation of 60W (Tc). The low Rds(on) of 3.5Ohm at 1A, 10V, coupled with a gate charge of 9.5 nC @ 10V and input capacitance of 130 pF @ 100V, facilitates efficient switching. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a standard TO-220-3 package, suitable for through-hole mounting. This MOSFET is utilized in industries such as power supplies, lighting, and industrial motor control.
Additional Information
Series: SuperMESH5™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 130 pF @ 100 V |
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