STP3N62K3
MOSFET N-CH 620V 2.7A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics SuperMESH3™ N-Channel MOSFET, part number STP3N62K3. This device offers a 620V drain-to-source voltage and a continuous drain current of 2.7A at 25°C (Tc). With a maximum power dissipation of 45W (Tc) and a low on-resistance of 2.5 Ohms at 1.4A and 10V, it is suitable for demanding applications. The STP3N62K3 features a gate charge of 13 nC at 10V and an input capacitance of 385 pF at 25V. Key parameters include a Vgs(th) of 4.5V at 50µA and a maximum Vgs of ±30V. Operating temperature is rated up to 150°C (TJ). This through-hole component is packaged in a TO-220-3 configuration. It finds application in power supply units, lighting, and industrial motor control.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 620 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 385 pF @ 25 V |
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